With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combina.
• Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
• Zero Reverse Recovery Current / Forward
Recovery Voltage
• Temperature-Independent Switching Behavior
Applications
• Industrial Switched Mode Power Supplies
• Uninterruptible & AUX Power Supplies
• Boost for PFC & DC-DC Stages
• Solar Inverters
Maximum Ratings (TC = 25°C Unless Otherwise Specified)
Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current
Power Dissipation
i2t Value
Symbol VRRM VDC IF
IFRM IFS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C6D20065D1 |
Wolfspeed |
20A Silicon Carbide Schottky Diode | |
2 | C6D20065G |
Wolfspeed |
20A Silicon Carbide Schottky Diode | |
3 | C6D20065H |
Wolfspeed |
20A Silicon Carbide Schottky Diode | |
4 | C6D04065A |
Wolfspeed |
4A Silicon Carbide Schottky Diode | |
5 | C6D05170H |
Wolfspeed |
5A Silicon Carbide Schottky Diode | |
6 | C6D06065G |
Wolfspeed |
6A Silicon Carbide Schottky Diode | |
7 | C6D06065Q |
Wolfspeed |
6A Silicon Carbide Schottky Diode | |
8 | C6D08065A |
Wolfspeed |
8A Silicon Carbide Schottky Diode | |
9 | C6D08065E |
Wolfspeed |
8A Silicon Carbide Schottky Diode | |
10 | C6D10065 |
CREE |
Silicon Carbide Schottky Diode | |
11 | C6D10065A |
CREE |
Silicon Carbide Schottky Diode | |
12 | C6D10170H |
Wolfspeed |
10A Silicon Carbide Schottky Diode |