C5091 - Toshiba

C5091 2SC5091

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 2SC5091 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector pow.

Features

istics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 8 V, IC = 20 mA Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Cre ¾ ¾ 50 ¾ ¾ ¾ 1 mA ¾ 1 mA ¾ 160 0.7 ¾ pF 0.5 0.95 pF Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-19 Marking 2SC5091 2 2003-03-19 2SC5091 3 2003-03-19 2SC5091 S-Parameter ZO = 50.