C5087 - Toshiba

C5087 2SC5087

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 2SC5087 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current C.

Features

ok (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1C Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit 5 7 ⎯ 18 9.5 13 ⎯ 1 ⎯ .