C5019 - Panasonic

C5019 Silicon NPN Transistor

Transistors 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 4.5±0.1 ■ Features 1.6±0.2 1.5±0.1 • Low noise figure NF 2.5±0.1 3˚ 4.0–+00..2205 • High maximum unilateral power gain GUM • High transition frequency fT • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion throu.

Features

1.6±0.2 1.5±0.1
• Low noise figure NF 2.5±0.1 3˚ 4.0
  –+00..2205
• High maximum unilateral power gain GUM
• High transition frequency fT
• Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing 1 0.4±0.08 1.5±0.1 23 0.5±0.08 3˚ 1.0
  –+00..21 0.4±0.04 /
■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit 2.6±0.1 0.4 max. c e. d typ Collector-base voltage (Emitter open) VCBO 15 V n d stag tinue Collector-emitter voltage (Base open) VCEO 10 V a e cle con Emitter-base voltage .