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C4D05120A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = 1200 V IF (TC=135˚C) = 9.5 A Qc = 27 nC • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits TO-220-2.
Package
VRRM
= 1200 V
IF (TC=135˚C) =
9.5 A
Qc = 27 nC
• 1.2kV Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching
• Extremely Fast Switching
• Positive Temperature Coefficient on VF Benefits
TO-220-2
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
PIN 1 PIN 2
CASE
Applications
Part Number
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stage.
C4D05120A - Wolfspeed
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C4D05120E |
Cree |
Silicon Carbide Schottky Diode |
|
| 2 | C4D02120A |
Cree |
Silicon Carbide Schottky Diode |
|
| 3 | C4D02120E |
Cree |
Silicon Carbide Schottky Diode |
|
| 4 | C4D08120A |
Cree |
Silicon Carbide Schottky Diode |
|
| 5 | C4D08120A |
Wolfspeed |
8A Silicon Carbide Schottky Diode |
|
| 6 | C4D08120E |
Cree |
Silicon Carbide Schottky Diode |
|
| 7 | C4D10120A |
Cree |
Silicon Carbide Schottky Diode |
|
| 8 | C4D10120A |
Wolfspeed |
10A Silicon Carbide Schottky Diode |
|
| 9 | C4D10120D |
Cree |
Silicon Carbide Schottky Diode |
|
| 10 | C4D10120D |
Wolfspeed |
10A Silicon Carbide Schottky Diode |
|
| 11 | C4D10120E |
Cree |
Silicon Carbide Schottky Diode |
|
| 12 | C4D10120E |
Wolfspeed |
10A Silicon Carbide Schottky Diode |
|