C4769 - Sanyo Semicon Device

C4769 2SC4769

Ordering number:EN3665 NPN Triple Diffused Planar Silicon Transistor 2SC4769 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2.

Features

· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
· On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4769] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 w w w . D a t a S h e e t 4 U . c o m 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO.