C4666 - Toshiba

C4666 2SC4666

2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter .

Features

gn the appropriate reliability upon reviewing the Weight: 0.006 g (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol Test Condition ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note) VCE = 6 V, IC = 2 .