C4638 - Panasonic

C4638 Silicon NPN Transistor

Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 ■ Features 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1 • Low collector-emitter saturation voltage VCE(sat) • Full-pack .

Features

10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
• High-speed switching
• High collector-base voltage (Emitter open) VCBO φ 3.1±0.1
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C 1.4±0.1 1.3±0.2 / Parameter Symbol Rating Unit 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+
  –00..12 Collector-base voltage (Emitter open) VCBO 800 V e ) Collector-emitter voltage (E-B short) VCES 800 V c type Collector-emitter voltage (Base open) VCEO 500 V n d tage. ued Emitter-base voltage (Collect.