Power Transistors 2SC4621 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features 15.0±0.3 11.0±0.2 5.0±0.2 3.2 0.7 q High-speed switching 12.5 3.5 15.0±0.2 q High collector to base voltage VCBO q Wide area of safe operation (ASO) φ3.2±0.1 q Full-pack package which can be installed to the heat si.
15.0±0.3 11.0±0.2 5.0±0.2 3.2 0.7 q High-speed switching 12.5 3.5 15.0±0.2 q High collector to base voltage VCBO q Wide area of safe operation (ASO) φ3.2±0.1 q Full-pack package which can be installed to the heat sink with / one screw 21.0±0.5 2.0±0.2 2.0±0.1 e s Absolute Maximum Ratings (TC=25˚C) c type) Parameter Symbol Ratings Unit 16.2±0.5 Solder Dip n d tage. ued Collector to base voltage VCBO 500 V le s ntin VCES 500 V a e c co Collector to emitter voltage cy is VCEO 400 V n u t life ed, d Emitter to base voltage VEBO 7 V duc typ Peak collector current .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C4623 |
Sanyo Semicon Device |
2SC4623 | |
2 | C4624 |
Mitsubishi Electric Semiconductor |
2SC4624 | |
3 | C4600 |
Vectron International |
OCXO | |
4 | C4600 |
Sanyo |
2SC4600 | |
5 | C4601 |
Sanyo |
2SC4601 | |
6 | C4602 |
Sanyo |
2SC4602 | |
7 | C4606 |
Panasonic |
Silicon NPN Transistor | |
8 | C460UT170 |
CREE |
LED | |
9 | C460UT190 |
CREE |
LED | |
10 | C461 |
Renesas |
2SC461 | |
11 | C4612 |
Sanyo |
2SC4612 | |
12 | C4613 |
Sanyo |
2SC4613 |