C4540 - Toshiba

C4540 2SC4540

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4540 Power Amplifier Applications Power Switching Applications 2SC4540 Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1735 .

Features

mitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 700 mA IC = 500 mA, IB = 25 mA IC = 500 mA, IB = 25 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ― ― 0.1 µA ― ― 0.1 µA 50 ― ― V 120 ― 400 40 ― ― ― ― 0.5 V ― ― 1.2 V ― 100 ― MHz ― 10 ― pF Turn-on time Switching tim.