C4409 - Toshiba

C4409 2SC4409

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Power switching applications 2SC4409 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.) • Small flat package • PC = 1~2 W (Mounted on a ceramic substrate) • Complementary to 2SA1681 .

Features

nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SC4409 Characteristics Collector cut-off current.