C4317 - Toshiba

C4317 2SC4317

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 2SC4317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector pow.

Features

acteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note) ¾ ¾ 50 ¾ ¾ ¾ ¾ ¾ 0.65 0.45 1 1 250 ¾ 0.9 mA mA pF pF Note: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-19 Marking 2SC4317 2 2003-03-19 2SC4317 3 2003-03-19 2SC4317 S-Parameter ZO = 50 W, Ta = 25°C VCE = 8 V, IC = 5 mA Frequency S11 MHz .