C4213 - Toshiba

C4213 2SC4213

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 2SC4213 For Muting and Switching Applications Unit: mm  High emitter-base voltage: VEBO = 25 V  High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)  Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)  High DC current gain: hFE = 200 to 1200  Small package Absolute Maxi.

Features

mperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1：For devices with the ordering part number ending in LF(T. Note 2：For devices with the ordering part number in other than LF(T. .