C4188 - Sanyo

C4188 2SC4188

Ordering number:ENN2557B NPN Epitaxial Planar Silicon Transistor 2SC4188 Ultrahigh-Definition CRT Display Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.3pF typ. · Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4188] 10.2 3.6 .

Features

· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.3pF typ.
· Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4188] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collecor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Tc=25˚C Junction Tempreature Storage temperature Tj Tstg The 2SC4188 is classified by 10mA hFE as.