C4139 - Sanken

C4139 2SC4139

2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4139 500 400 10 15(Pulse30) 5 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.0±0.2.

Features

6.0g a. Type No. b. Lot No. I C
  – V CE Characteristics (Typical) 15 1. 5A V CE (sat),V BE (sat)
  – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) 1.5 I C
  – V BE Temperature Characteristics (Typical) 10 (V C E =4V) 1 .2 A 800 mA Collector Current I C (A) 600mA 8 V B E (sat) 1.0
  –55˚C (Cas ase 25˚C (C 125˚C 10 e Temp) Temp) Temp ) em p) ˚C eT Collector Current I C (A) 6 mp) 400m A Temp (Case 25˚C ) 25 125 as ˚C ( 5 I B =100mA 12 5˚ C ( 2 5
  –5 ˚C V C E (sat) .