C4115E - Jiangsu Changjiang Electronics

C4115E 2SC4115E

NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:CFQ, CFR, CFS C TOP B www.DataSheet4U.com 1. BASE 2. EMITTER 3. COLLECTOR E C BACK E B CFQ B E MAXIMUM RA.

Features

Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:CFQ, CFR, CFS C TOP B www.DataSheet4U.com 1. BASE 2. EMITTER 3. COLLECTOR E C BACK E B CFQ B E MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Temperature Storage Temperature Value 40 20 6 3 150 150 -55-150 Units V V.