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VDS 1200 V C3M0032120D ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse.
Package
• 3rd generation SiC MOSFET technology
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
•
•
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency
Applications
• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies
Part Number
Package
Marking
C3M0032120D
Maximum Ra.
C3M0032120D - Wolfspeed
C3M0032120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C3M0032120J1 |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 2 | C3M0032120K |
CREE |
Silicon Carbide Power MOSFET |
|
| 3 | C3M0032120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 4 | C3M0030090K |
CREE |
Silicon Carbide Power MOSFET |
|
| 5 | C3M0030090K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 6 | C3M0015065D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 7 | C3M0015065K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 8 | C3M0016120D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 9 | C3M0016120D |
CREE |
Silicon Carbide Power MOSFET |
|
| 10 | C3M0016120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 11 | C3M0016120K |
CREE |
Silicon Carbide Power MOSFET |
|
| 12 | C3M0021120D |
CREE |
Silicon Carbide Power MOSFET |
|