C3M0025065L - Wolfspeed

C3M0025065L Silicon Carbide Power MOSFET

C3M0025065L Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode F eature s • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halo.

Features

, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo. Symbol VDSmax VGSmax Drain - Source Voltage Gate - Source Voltage Parameter ID Continuous Drain Current, VGS = 15 V ID(pulse) Pulsed Drain Current, Pulse width tP limited by Tjmax PD Power Dissipation, TC=25˚C, TJ = 175 ˚C TJ Junction Temperature TC , Tstg Case Temperature and Storage Temperature TL Solder Temperature (According to JEDEC J-STD-020) Note (1): Recommended turn off / turn on gate voltage VGS - 4V...0V / +15V Note (2): Verifi.