C3998 - Sanyo Semicon Device

C3998 2SC3998

Ordering number : EN2732A 2SC3998 SANYO Semiconductors DATA SHEET 2SC3998 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (adoption of HVP process). • Adoption of MBIT process. Specifica.

Features

• High speed (tf=100ns typ).
• High breakdown voltage (VCBO=1500V).
• High reliability (adoption of HVP process).
• Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cu.