Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1 • Wide safe operation area • Satisfactory linearity of f.
10.0±0.2 5.5±0.2
Unit: mm 4.2±0.2 2.7±0.2
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
φ 3.1±0.1
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
1.4±0.1
1.3±0.2
/
■ Absolute Maximum Ratings TC = 25°C
14.0±0.5 Solder Dip
(4.0)
0.8±0.1
0.5+
–00..12
Parameter
Symbol Rating
Unit
e e) Collector-base voltage 2SC3979 VCBO
900
V
c typ (Emitter open)
2SC3979A
1 000
n d stage. tinued Collector-emitter voltage 2SC3979 VCES
900
V
le on (E.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C397 |
National Electronics |
SILICON CONTROLLED RECTIFIER | |
2 | C3972 |
Panasonic |
Silicon NPN Transistor | |
3 | C3973 |
Panasonic Semiconductor |
2SC3973 | |
4 | C3974 |
Panasonic |
Silicon NPN Transistor | |
5 | C3975 |
Panasonic |
2SC3975 | |
6 | C3902 |
Sanyo Semicon Device |
2SC3902 | |
7 | C3904 |
Panasonic |
2SC3904 | |
8 | C3907 |
SavantIC |
2SC3907 | |
9 | C3912 |
Sanyo |
2SC3912 | |
10 | C3913 |
Sanyo |
2SC3913 | |
11 | C3914 |
Sanyo |
2SC3914 | |
12 | C3915 |
Sanyo |
2SC3915 |