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BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 45 50 5.0 800 625 5.0 Unit Vdc Vdc Vdc .
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
Symbol VCEO VCBO VEBO
IC PD
Value 45 50 5.0 800 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
W
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Ju.
C33725 - Fairchild Semiconductor
BC337 / BC338 — NPN Epitaxial Silicon Transistor September 2015 BC337 / BC338 NPN Epitaxial Silicon Transistor Featur.
C33725 - Multicomp
Silicon Planar Epitaxial Transistors. General Purpose Transistors Best Suited for use in Driver and Output Stages of Au.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C3371 |
Inchange Semiconductor |
2SC3371 |
|
| 2 | C33716 |
ON Semiconductor |
Amplifier Transistors |
|
| 3 | C33716 |
NXP |
Amplifier Transistors |
|
| 4 | C3374 |
Hitachi Semiconductor |
2SC3374 |
|
| 5 | C33740 |
NXP |
Amplifier Transistors |
|
| 6 | C33740 |
ON Semiconductor |
NPN Amplifier Transistors |
|
| 7 | C33740 |
Philips |
500mA NPN general-purpose transistors |
|
| 8 | C3376 |
Toshiba Semiconductor |
2SC3376 |
|
| 9 | C3377 |
Rohm |
2SC3377 |
|
| 10 | C337S |
Coto |
High-Current Relays |
|
| 11 | C3300 |
SavantIC |
2SC3300 |
|
| 12 | C3302 |
Toshiba Semiconductor |
2SC3302 |
|
