C3279 - Toshiba Semiconductor

C3279 2SC3279

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA.

Features

se breakdown voltage Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 30 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 mA, IC = 0 VCE = 1 V, IC = 0.5 A VCE = 1 V, IC = 2 A IC = 2 A, IB = 50 mA VCE = 1 V, IC = 2 A VCE = 1 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min ¾ ¾ 10 6 140 70 ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 200 0.2 0.86 150 27 Max 0.1 0.1 ¾ ¾ 600 ¾ 0.5 1.5 ¾ ¾ V V MHz pF Unit mA mA V V Note 2: hFE (1) classi.