TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Power Switching Applications 2SC3267 Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cu.
1) (Note)
VCE = 2 V, IC = 100 mA
hFE (2) VCE (sat)
VBE fT Cob
VCE = 2 V, IC = 2 A IC = 2 A, IB = 0.1 A VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification Y: 120~240, GR: 200~400, BL: 350~700
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
20 ¾ ¾
V
6 ¾¾ V
120 ¾ 700
75 ¾ ¾
¾ ¾ 0.5 V
¾
¾ 0.85
V
¾ 120 ¾ MHz
¾ 30 ¾ pF
1 2003-03-25
2SC3267
2 2003-03-25
2SC3267
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of it.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3263 |
Sanken electric |
2SC3263 | |
2 | C3265 |
Toshiba Semiconductor |
2SC3265 | |
3 | C3266 |
Toshiba Semiconductor |
2SC3266 | |
4 | C3268 |
Toshiba Semiconductor |
2SC3268 | |
5 | C326S |
Coto |
High-Current Relays | |
6 | C3200 |
Korea Electronics |
2SC3200 | |
7 | C3202 |
KEC |
Silicon NPN Transistor | |
8 | C32025 |
Cast |
Digital Signal Processor Megafunction | |
9 | C3203 |
Korea Electronics |
2SC3203 | |
10 | C3203 |
SEMTECH |
NPN Transistor | |
11 | C3205 |
HOTTECH |
NPN Transistor | |
12 | C3205 |
Kexin |
Epitaxial Planar NPN Transistor |