VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 55 A 40 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefi.
Package
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
TO-247-3
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Battery Chargers
• Motor Drives
• Pulsed Power Applications
Part Number C2M0040120D
Package TO-247-3
Marking C2M0040120
Maximum Ratings (TC = 25 ˚C unless otherwi.
C2M0040120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2M0045170D |
Wolfspeed |
Silicon Carbide Power MOSFET | |
2 | C2M0045170D |
Cree |
Silicon Carbide Power MOSFET | |
3 | C2M0045170P |
Wolfspeed |
Silicon Carbide Power MOSFET | |
4 | C2M0045170P |
Cree |
Silicon Carbide Power MOSFET | |
5 | C2M0025120D |
Wolfspeed |
Silicon Carbide Power MOSFET | |
6 | C2M0025120D |
Cree |
Silicon Carbide Power MOSFET | |
7 | C2M0080120D |
Cree |
Silicon Carbide Power MOSFET | |
8 | C2M0080120D |
Wolfspeed |
Silicon Carbide Power MOSFET | |
9 | C2M0080170P |
Cree |
Silicon Carbide Power MOSFET | |
10 | C2M0160120D |
Cree |
Silicon Carbide Power MOSFET | |
11 | C2M0160120D |
Wolfspeed |
Silicon Carbide Power MOSFET | |
12 | C2M0280120D |
Cree |
Silicon Carbide Power MOSFET |