·With TO-3PN package ·High power dissipation ·High current capability APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Product Specification 2SC2578 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO VCEO .
breakdown voltage IC=10mA ;RBE=: V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0 ICBO Collector cut-off current VCB=100V; IE=0 IEBO Emitter cut-off current VEB=4V; IC=0 hFE DC current gain IC=3A ; VCE=4V VCE(sat) Collector-emitter saturation voltage IC=3A ; IB=0.3A fT Transition frequency IC=0.5A ; VCE=10V MIN TYP. MAX UNIT 140 V 100 V 6 V 0.1 mA 0.1 mA 50 2 V 20 MHz 2 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specification 2SC2578 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2570 |
ETC |
2SC2570 | |
2 | C2570A |
NEC |
2SC2570A | |
3 | C2570A |
Renesas |
NPN EPITAXIAL SILICON RF TRANSISTOR | |
4 | C2577 |
Wing Shing Electronic |
2SC2577 | |
5 | C2579 |
SavantIC |
2SC2579 | |
6 | C25 |
Xiamen Faratronic |
Uncoated Metallized Polyester Film Capacitor | |
7 | C2500 |
Toshiba |
2SC2500 | |
8 | C2504 |
Shindengen |
2SC2504 | |
9 | C250R500P |
Component General |
Microwave Carbon Rod Resistors | |
10 | C250R750P |
Component General |
Microwave Carbon Rod Resistors | |
11 | C251 |
NEC |
UPC251 | |
12 | C251 |
NEC |
Dual Amplifier |