Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • TO-126B package which requires no insulation plate for installation to the heat.
3.05±0.1
• High collector-emitter voltage (Base open) VCEO
• TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1 16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
70
V
c type) Collector-emitter voltage 2SC2497 VCEO
50
V
n d ge. ed (Base open)
2SC2497A
60
le sta ntinu Emitter-base voltage (Collector open) VEBO
5
V
a e cyc isco Collector current
IC
1.5
A
life d, d Peak collector current
ICP
3
A
n u duct type Collector power dissipation
PC
1.2
W
te tin .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2497 |
Panasonic |
2SC2497 | |
2 | C2498 |
Toshiba Semiconductor |
2SC2498 | |
3 | C2499 |
Toshiba |
2SC2499 | |
4 | C24 |
Xiamen Faratronic |
Capacitor | |
5 | C2400 |
Vectron International |
TCXO | |
6 | C2404 |
Panasonic |
Silicon NPN Transistor | |
7 | C2405 |
Panasonic |
Silicon NPN Transistor | |
8 | C2406 |
Panasonic Semiconductor |
2SC2406 | |
9 | C2407 |
NEC |
NPN Silicon Transistor | |
10 | C2410 |
Vectron International |
TCXO | |
11 | C241J105 |
Xiamen Faratronic |
Capacitor | |
12 | C241J154 |
Xiamen Faratronic |
Capacitor |