·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Power Dissipation ·Complement to Type 2SA1060 APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 80 V wwwVCEO Collector-Emitter Voltage 80 V VEBO Emitter-B.
CE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 2.0 V 1.8 V 50 μA 50 μA hFE-1 DC Current Gain IC= 20mA ; VCE= 5V 20 hFE-2 DC Current Gain i.cnhFE-3 DC Current Gain .iscsemfT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V IC= 3A; VCE= 5V IC= 0.5A; VCE= 5V www hFE-2 Classifications 40 20 RQP 20 220 MHz 40-80 60-120 100-200 isc Website:www.iscsemi.cn 2 http://www.Datasheet4U.com .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2480 |
Panasonic |
Silicon NPN Transistor | |
2 | C2482 |
Toshiba Semiconductor |
2SC2482 | |
3 | C2489 |
INCHANGE |
2SC2489 | |
4 | C24 |
Xiamen Faratronic |
Capacitor | |
5 | C2400 |
Vectron International |
TCXO | |
6 | C2404 |
Panasonic |
Silicon NPN Transistor | |
7 | C2405 |
Panasonic |
Silicon NPN Transistor | |
8 | C2406 |
Panasonic Semiconductor |
2SC2406 | |
9 | C2407 |
NEC |
NPN Silicon Transistor | |
10 | C2410 |
Vectron International |
TCXO | |
11 | C241J105 |
Xiamen Faratronic |
Capacitor | |
12 | C241J154 |
Xiamen Faratronic |
Capacitor |