¡¤ With TO-3PFa package ¡¤ Low collector saturation voltage ¡¤ High breakdown voltage APPLICATIONS ¡¤ For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ¡¤ Absolute maximum ratings(Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM IB Collector-base voltage PARAMETER A H C IN Collector current Base current Collector-emi.
tion voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 400 1.0 1.5 100 100 ¦Ì ¦Ì TYP. MAX UNIT V V V A A SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton tstg tf Fall time A H C IN Storage time Turn-on time EM S E NG D N O IC R O T UC 11 1.0 2.5 1.0 MHz ¦Ì ¦Ì ¦Ì s s s IC=5A; VCC=100V IB1=-IB2=1A www.DataSheet4U.com 2 In.
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, .
C2310 TCXO Typical Applications PCS Base Stations Land Mobile Radio Cellular Telephony Radio in the Local Loop Previou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C231 |
Motorola |
(C230 - C233) Silicon Controlled Rectifier | |
2 | C2312 |
Mitsubishi Electric |
2SC2312 | |
3 | C2312 |
HGSemi |
Silicon NPN POWER TRANSISTOR | |
4 | C2314 |
Sanyo Semiconductor Corporation |
2SC2314 | |
5 | C2315 |
Sanken electric |
NPN Transistor 2SC2315 | |
6 | C2316 |
Sanken electric |
NPN Transistor 2SC2316 | |
7 | C231A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
8 | C231A3 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
9 | C231B |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
10 | C231B3 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
11 | C231C |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
12 | C231C3 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |