·With TO-220 package ·High collector-emitter breakdown voltage : VCEO=200V(min) APPLICATIONS ·Power amplifier applications ·TV vertical deflection applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-em.
itter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=0.5mA ;IE=0 IE=0.5mA ;IC=0 IC=0.5A ;IB=50m A VCB=200V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=10V 50 MIN 200 200 6 2SC2168 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 1.0 10 10 V µA µA 20 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2168 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C216 |
Intel |
Platform Controller | |
2 | C2161 |
Cambridge Semiconductor |
flyback controllers | |
3 | C2161PX2 |
Cambridge Semiconductor |
Primary Sensing SMPS Controller | |
4 | C2162 |
Cambridge Semiconductor |
flyback controllers | |
5 | C2162PX2 |
Cambridge Semiconductor |
Primary Sensing SMPS Controller | |
6 | C2163PX2 |
Cambridge Semiconductor |
Primary Sensing SMPS Controller | |
7 | C2166 |
Mitsubishi Electric Semiconductor |
2SC2166 | |
8 | C2167 |
SavantIC |
2SC2167 | |
9 | C2104 |
Toshiba |
Silicon NPN Transistor | |
10 | C2120 |
JIANGSU CHANGJIANG |
NPN Transistor | |
11 | C2120 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
12 | C2120 |
SeCoS |
NPN Transistor |