C2026 - Inchange Semiconductor

C2026 2SC2026

·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Ba.

Features

2V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 25 200 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 15 2.0 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.75 1.1 pF Gpe Power Gain VCE= 10 V,IC= 10mA; f= 500MHz 13 15 dB NF Noise Figure VCE= 10 V,IC= 3mA; f= 500MHz; RG= 50Ω 3 4 dB www.DataSheet4U.com isc Website：www.iscsemi.cn 2 .