·With TO-220 package ·Collector current :IC=4A ·Collector power dissipation :PC=30W@TC=25 APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SC1826 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL .
IC=25mA ;IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=80V;IE=0 100 µA IEBO Emitter cut-off current VEB=6V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=4V 40 320 fT Transition frequency IC=0.5A ; VCE=12V 10 MHz 2 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specification 2SC1826.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C1825Cxxxx |
Kemet Electronics |
Ceramic Chip Capacitors | |
2 | C1827 |
Inchange Semiconductor |
2SC1827 | |
3 | C1803 |
ETC |
NPN Silicon Transistor | |
4 | C1809 |
Rohm |
2SC1809 | |
5 | C180A |
Digitron Semiconductors |
SILICON CONTROLLED RECTFIERS | |
6 | C180B |
Digitron Semiconductors |
SILICON CONTROLLED RECTFIERS | |
7 | C180C |
Digitron Semiconductors |
SILICON CONTROLLED RECTFIERS | |
8 | C180D |
Digitron Semiconductors |
SILICON CONTROLLED RECTFIERS | |
9 | C180E |
Digitron Semiconductors |
SILICON CONTROLLED RECTFIERS | |
10 | C180M |
Digitron Semiconductors |
SILICON CONTROLLED RECTFIERS | |
11 | C180N |
Digitron Semiconductors |
SILICON CONTROLLED RECTFIERS | |
12 | C180P |
Digitron Semiconductors |
SILICON CONTROLLED RECTFIERS |