C1317 - Panasonic

C1317 Silicon NPN Transistor

Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 I Features • Low collector to emitter saturation voltage VCE(sat) • Complementary pair with 2SA719 and 2SA720 5.0±0.2 0.7±0.1 5.1±0.2 Unit: mm 4.0±0.2 0.7±0.2 13.5±0.5 I Absolute Maximum Ratings.

Features

• Low collector to emitter saturation voltage VCE(sat)
• Complementary pair with 2SA719 and 2SA720 5.0±0.2 0.7±0.1 5.1±0.2 Unit: mm 4.0±0.2 0.7±0.2 13.5±0.5 I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to 2SC1317 VCBO 30 V base voltage 2SC1318 60 Collector to 2SC1317 VCEO 25 V emitter voltage 2SC1318 50 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VEBO 7 V ICP 1 A IC 500 mA PC 625 mW Tj 150 °C Tstg −55 to +150 °C 0.45+
  –00..115 (1.27.