·With TO-3 package ·High power dissipation APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION MAXIMUN RATINGS SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector c.
VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ; IB=0 IC=0.1mA ; IE=0 IE=0.1mA ; IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=300V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V 50 MIN 200 300 7 2SC1227 TYP. MAX UNIT V V V 1.0 1.5 20 20 V V µA µA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE 2SC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C122 |
SSDI |
8-A Silicon Controlled Rectifiers | |
2 | C1222 |
USHA |
Transistors | |
3 | C1226 |
IMP |
CMOS | |
4 | C1226 |
Panasonic Semiconductor |
Silicon NPN Power Transistors | |
5 | C1228HA |
NEC |
Low Noise Dual Preamplifier | |
6 | C122A |
Solid State |
8A Silicon Controlled Rectifiers | |
7 | C122A |
NEC |
SCR | |
8 | C122A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
9 | C122B |
Solid State |
8A Silicon Controlled Rectifiers | |
10 | C122B |
NEC |
SCR | |
11 | C122B |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
12 | C122B1 |
ON Semiconductor |
(C122B1 / C122F1) Silicon Controlled Rectifiers Reverse Blocking Thyristors |