C1210 - IMP Inc

C1210 Process C1210 CMOS 1.2mm Zero Threshold Devices

® ISO 9001 Registered Process C1210 CMOS 1.2µ m Zero Threshold Devices Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Zero Vt N-Channel Transis. Threshold Voltage Body Factor Conduction Factor Saturation Current Sym.

Features

cal
  –0.9 0.38 25 1.1 0.8 Maximum
  –1.1 29 1.3 Unit V V1/2 µA/V2 µm µm V V Comments 100x1.2µm 100x1.2µm 100x100µm 100x1.2µm Per side Zero Vt P-Channel Transis. Threshold Voltage Body Factor Conduction Factor Saturation Current Symbol VTZLP γZLP βZLP IDSATZP Minimum
  –0.3 21
  –11 Typical
  –0.1 0.36 26
  –15 Maximum 0.1 31
  –19 Unit V V1/2 µA/V2 mA Comments 100x100µm 100x100µm 100x100µm 100x1.5µm © IMP, Inc. 47 Process C1210 Electrical Characteristics Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide .