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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by C106/D Silicon Controlled Rectifier Reverse Blocking Triode Thyristors . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation i.
(TA = 30°C) Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ =
–40 to +110°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power Average Gate Power Peak Forward Gate Current Symbol VDRM or VRRM Value 50 100 200 400 600 4 2.55 20 1.65 0.5 0.1 0.2 Amps Amps Amps A2s Watt Watt Amp Unit Volts
IT(RMS) IT(AV) ITSM I2t PGM PG(AV) IGFM
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.) positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested wi.
C106A - Digitron Semiconductors
C106 SERIES High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIERS FEAT.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C106 |
Motorola Inc |
Silicon Controlled Rectifier |
|
| 2 | C106 |
ON Semiconductor |
Sensitive Gate Silicon Controlled Rectifiers |
|
| 3 | C106 |
Littelfuse |
Thyristors |
|
| 4 | C106 |
GE Solid State |
4-A Sensitive-Gate Silicon Controlled Rectifiers |
|
| 5 | C106 |
BLUE ROCKET ELECTRONICS |
Thyristor |
|
| 6 | C106 |
Inchange Semiconductor |
Thyristors |
|
| 7 | C1060 |
ETC |
Silicon NPN Transistor |
|
| 8 | C1060C |
NEC |
2.5V HIGH PRECISION REFERENCE VOLTAGE |
|
| 9 | C1061 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | C1061 |
Mospec Semiconductor |
NPN Silicon Transistor |
|
| 11 | C1061-AL |
Coilcraft |
PFC Coils |
|
| 12 | C1062-BL |
Coilcraft |
PFC Coils |
|
