C009T - GME

C009T N-Channel MOSFET

Production specification N-Channel Enhancement Mode Field Effect Transistor BL2300 FEATURES z VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A Pb z VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free z VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A APPLICATIONS z Power Management in Note book. z Portable Equipment. z Battery Powered System. z Load Switch. z DSC. ORDERING IN.

Features

z VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A Pb z VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free z VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A APPLICATIONS z Power Management in Note book. z Portable Equipment. z Battery Powered System. z Load Switch. z DSC. ORDERING INFORMATION Type No. Marking BL2300 C009T SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 20 VGSS Gate -Source voltage ±10 ID Maximum Drain current TA=25℃ 3.8 IDM PD RθJA TJ,Tstg Pulsed Drain current Power Dissipation Thermal resistance,J.