BZX85B... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Applications 94 9369 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type .
D D D D
Sharp edge in reverse characteristics Low reverse current Low noise Very high stability
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV Tj Tstg Value 1.3 175
–65...+175 Unit W °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 110 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1 Unit V.
BZX85B Series VZ : 3.6 to 200V PD : 1.3W FEATURES : • Silicon planar power zener diodes. • For use in stabilizing and cl.
BZX85B SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. Max. 0.7 .
Not Recommended for New Automotive Design www.vishay.com BZX85-Series Vishay Semiconductors Zener Diodes LINKS TO AD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BZX85B75 |
EIC |
ZENER DIODES | |
2 | BZX85B75 |
Vishay |
Zener Diodes | |
3 | BZX85B |
Vishay Telefunken |
Silicon Epitaxial Planar Z-Diodes | |
4 | BZX85B |
SEMTECH |
SILICON PLANAR POWER ZENER DIODES | |
5 | BZX85B10 |
Vishay Telefunken |
Silicon Epitaxial Planar Z-Diodes | |
6 | BZX85B10 |
EIC |
ZENER DIODES | |
7 | BZX85B10 |
SEMTECH |
SILICON PLANAR POWER ZENER DIODES | |
8 | BZX85B10 |
Vishay |
Zener Diodes | |
9 | BZX85B100 |
EIC |
ZENER DIODES | |
10 | BZX85B100 |
Vishay |
Zener Diodes | |
11 | BZX85B11 |
Vishay Telefunken |
Silicon Epitaxial Planar Z-Diodes | |
12 | BZX85B11 |
EIC |
ZENER DIODES |