BZT52-C2V4S thru BZT52-C39S SURFACE MOUNT SILICON ZENER DIODES VOLTAGE FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V - 39V • Ideally Suited for Automated Assembly Processes 2.4 - 39 Volts POWER 200 mWatts PACKAGE SOD-323 MECHANICAL DATA Case: SOD-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Ap.
• Planar Die construction
• 200mW Power Dissipation
• Zener Voltages from 2.4V - 39V
• Ideally Suited for Automated Assembly Processes
2.4 - 39 Volts
POWER
200 mWatts
PACKAGE
SOD-323
MECHANICAL DATA
Case: SOD-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter Power Dissipation (Notes A) at 25OC Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) (Notes B) Operating Junction and StorageTemperature Range Symbol Value 200 2.0 -55 to +150 Units mW Amp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BZT52-C4V7 |
General Semiconductor |
ZENER DIODES | |
2 | BZT52-C4V7 |
Pan Jit International Inc. |
SURFACE MOUNT SILICON ZENER DIODES | |
3 | BZT52-C4V7 |
WILLAS |
410mW SURFACE MOUNT SILICON ZENER DIODES | |
4 | BZT52-C4V7 |
nexperia |
Single Zener diodes | |
5 | BZT52-C4V3 |
General Semiconductor |
ZENER DIODES | |
6 | BZT52-C4V3 |
Pan Jit International Inc. |
SURFACE MOUNT SILICON ZENER DIODES | |
7 | BZT52-C4V3 |
WILLAS |
410mW SURFACE MOUNT SILICON ZENER DIODES | |
8 | BZT52-C4V3 |
nexperia |
Single Zener diodes | |
9 | BZT52-C4V3S |
Pan Jit International Inc. |
SURFACE MOUNT SILICON ZENER DIODES | |
10 | BZT52-C43 |
General Semiconductor |
ZENER DIODES | |
11 | BZT52-C43 |
nexperia |
Single Zener diodes | |
12 | BZT52-C43 |
WILLAS |
410mW SURFACE MOUNT SILICON ZENER DIODES |