Low voltage drop and rectifier suited for switching mode base drive and transistor circuits. ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive Peak Forward Current Average Forward Current* Surge non Repetitive Forward Current Power Dissipation * Storage and Junction Temperature Range Maximum Lead Temperatu.
V
THERMAL RESISTANCE
Symbol Rth (j - a) Junction-ambient
* Parameter Value 25 Unit °C/W
* On infinite heatsink with 10mm lead length.
November 1994
1/5
BYW 98-50 → 200
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Synbol IR Tj = 25°C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 9A IF = 3A Test Conditions VR = VRRM Min. Typ. Max. 10 0.5 1.1 0.85 Unit µA mA V
RECOVERY CHARACTERISTICS
Symbol trr Qrr tfr VFP Tj = 25°C VR = 30V Tj = 25°C VR ≤ 30V Tj = 25°C Measured at 1.1 x VF Tj = 25°C Test Conditions IF = 1A See figure 10 IF = 2A IF = 1A IF = 1A diF/dt = - 50A/µs diF/dt = - 20A/µs tr = 10ns .
BYW98-50 - BYW98-200 SUPER FAST RECOVERY RECTIFIER DIODES VOLTAGE RANGE: 50-200V CURRENT: 3.0 A Features ! High current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BYW98-50S |
EIC |
SUPER FAST RECOVERY DIODES | |
2 | BYW98-100 |
STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES | |
3 | BYW98-100 |
SUNMATE |
SUPER FAST RECOVERY RECTIFIER DIODES | |
4 | BYW98-100S |
EIC |
SUPER FAST RECOVERY DIODES | |
5 | BYW98-150 |
STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES | |
6 | BYW98-150 |
SUNMATE |
SUPER FAST RECOVERY RECTIFIER DIODES | |
7 | BYW98-150S |
EIC |
SUPER FAST RECOVERY DIODES | |
8 | BYW98-200 |
STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES | |
9 | BYW98-200 |
STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES | |
10 | BYW98-200 |
SUNMATE |
SUPER FAST RECOVERY RECTIFIER DIODES | |
11 | BYW98-200S |
EIC |
SUPER FAST RECOVERY DIODES | |
12 | BYW98200 |
STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |