Glass passivated high efficiency dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYV32 series QUICK REFERENCE D.
working reverse voltage Continuous reverse voltage Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature square wave δ = 0.5; Tmb ≤ 115 ˚C sinusoidal a = 1.57; Tmb ≤ 118 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 115 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 20 18 28 20 125 137 78 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s ˚C ˚C IO(RMS) IFRM IFSM I2t .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BYV30 |
NXP |
Ultra Fast Recovery Rectifier Diodes | |
2 | BYV30-600P |
WeEn |
Ultrafast power diodes | |
3 | BYV30-xxx |
Usha |
(BYVxx) Ultra Fast Recovery Rectifier Diodes | |
4 | BYV30B-600P |
WeEn |
Ultrafast power diodes | |
5 | BYV30B-600PJ |
INCHANGE |
Ultrafast Rectifier | |
6 | BYV30JT-600P |
WeEn |
Ultrafast recovery diode | |
7 | BYV30W-600P |
WeEn |
Ultrafast power diodes | |
8 | BYV30X-600P |
WeEn |
Ultrafast power diodes | |
9 | BYV32-100 |
NXP |
Rectifier diodes ultrafast | |
10 | BYV32-100 |
General Semiconductor |
FAST EFFICIENT PLASTIC RECTIFIER | |
11 | BYV32-100 |
Vishay |
Dual Common-Cathode Ultrafast Rectifier | |
12 | BYV32-100-XM |
Seme LAB |
HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS |