Technische Information / Technical Information IGBT-Module IGBT-Modules BYM 300 B 170 DN2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Sperrspannung der Diode Diode rerverse voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward curren.
= 4500A/µs VR = 900V, V GE = -15V, Tvj = 25°C VR = 900V, V GE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 300A, - diF/dt = 4500A/µs VR = 900V, V GE = -15V, Tvj = 25°C VR = 900V, V GE = -15V, Tvj = 125°C Erec 16 31 mWs mWs Qr 34 75 µAs µAs IRM 220 330 A A VF min. - typ. 2,2 2 max. 2,6 V V prepared by: Alfons Wiesenthal approved by: Christoph Lübke date of publication: 2002-11-25 revision: 2.2 1(4) DB_BYM300B170DN2_2.2.xls Free Datasheet http://www.datasheet4u.com/ Technische Information / Technical Information IGBT-Module IGBT-Modules BYM 300 B 170 DN2 vo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BYM300A120DN2 |
eupec GmbH |
Diode Power Module | |
2 | BYM300A170DN2 |
eupec |
Diode Power Module | |
3 | BYM357DX |
NXP |
Damper-Modulator fast/ high-voltage | |
4 | BYM357X |
NXP |
Damper-Modulator fast/ high-voltage | |
5 | BYM358DX |
NXP |
Damper-Modulator fast/ high-voltage | |
6 | BYM358X |
NXP |
Damper-Modulator fast/ high-voltage | |
7 | BYM359DX |
NXP |
Dual diode fast/ high-voltage | |
8 | BYM359X |
NXP |
Dual diode fast/ high-voltage | |
9 | BYM36 |
NXP |
Fast soft-recovery controlled avalanche rectifiers | |
10 | BYM36 |
Vishay Telefunken |
Very Fast Soft-Recovery Avalanche Rectifier | |
11 | BYM36 |
Vishay Siliconix |
Fast Avalanche Sinterglass Diode | |
12 | BYM36A |
NXP |
Fast soft-recovery controlled avalanche rectifiers |