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BUZ25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ25 Voss 100 V Ros(on) 0.1 0 10 19 A • 100 VOLTS - FOR DCIDC CONVERTERS • HIGH CURRENT • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) • • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • UNINTERRUPTIBLE POWER SUPPLIES • MOTOR CONTROLS TO-3 N.
temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1)
• Introduced in 1988 week 44
June 1988
100
V
100
V
±20
V
19
A
75
A
78
W
-55 to 150
°C
150
°C
C
55/150/56
1/4 191
BUZ25
THERMAL DATA
Rthj _case Thermal resistance junction-case
max
Rthj _amb Thermal resistance junction-ambient
max
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameters
Test Conditions
1.6
°C/W
35
°C/W
OFF
,,
BUZ25 - INCHANGE
isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) ·SOA is Power Dissip.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUZ20 |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ20 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 3 | BUZ20 |
Infineon Technologies AG |
Power Transistor |
|
| 4 | BUZ20 |
Harris |
N-Channel Power MOSFET |
|
| 5 | BUZ20 |
STMicroelectronics |
N-Channel MOSFET |
|
| 6 | BUZ20 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | BUZ201 |
Siemens Semiconductor Group |
Power Transistor |
|
| 8 | BUZ201 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | BUZ202 |
Siemens Semiconductor Group |
Power Transistor |
|
| 10 | BUZ202 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | BUZ205 |
Siemens Semiconductor Group |
Power Transistor |
|
| 12 | BUZ205 |
INCHANGE |
N-Channel MOSFET |
|
