BUZ20LF - ETC

BUZ20LF N-Channel Power MOSFET

The BUZ20LF provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness. 16.5 3.5 unit:mm 1.2 0.8 12 3 2.55 2.55 2.7 13.0 0.4 1:G 2:D 3:S TO-220 INTERNAL SCHEMATIC DIAGRAM The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation.

Features

t(continuos)at TC=100℃ IDM(1) Drain Current(pulsed) PD Power Dissipation at TC=25℃ dv/dt(2) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max.Operating Junction Temperature Value 110 110 ±20 13.5 8.5 37 70 5.5 -55to150 150 Unit V V V A A A W V/ns ℃ ℃ 1/3 BUZ20LF THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Av.