BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.01 Ω Package Ordering Code BUZ111SL TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Cont.
ase Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.6 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 240 µA V GS(th) 1.2 IDSS 1.6 2 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ111S |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ11 |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | BUZ11 |
Siemens Semiconductor Group |
Power Transistor | |
4 | BUZ11 |
Intersil Corporation |
N-Channel Power MOSFET | |
5 | BUZ11 |
ON Semiconductor |
N-Channel Power MOSFET | |
6 | BUZ11 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
7 | BUZ11 |
INCHANGE |
N-Channel MOSFET | |
8 | BUZ110S |
Siemens Semiconductor Group |
Power Transistor | |
9 | BUZ110SL |
Siemens Semiconductor Group |
Power Transistor | |
10 | BUZ11A |
STMicroelectronics |
N-Channel MOSFET | |
11 | BUZ11A |
Siemens Semiconductor Group |
Power Transistor | |
12 | BUZ11A |
INCHANGE |
N-Channel MOSFET |