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The BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching regulators and motors control system applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CER V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-emitter Voltage (V BE = 0) Collecto.
ction-case Max 1.1 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 800 V V CE = 800 V V BE = 10 V I C = 100 mA 400 T case = 125 C o Min. Typ. Max. 1 3 10 Unit mA mA mA V V CEO(sus) ∗ Collector-Emitter SustainingVoltage (I B = 0) V CER(sus) ∗ Collector-Emitter Sustaining Voltage (R BE = 50 Ω ) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ t on ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Turn-on Time Storage .
BUX80 - INCHANGE
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for r.
BUX80 - Seme LAB
BUX80 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUX81 |
Infineon Technologies |
NPN Silicon Transistors |
|
| 2 | BUX81 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BUX81 |
Seme LAB |
SILICON NPN PLANAR TRANSISTOR |
|
| 4 | BUX81 |
INCHANGE |
NPN Transistor |
|
| 5 | BUX82 |
Seme LAB |
NPN PLANAR TRANSISTOR |
|
| 6 | BUX82 |
INCHANGE |
NPN Transistor |
|
| 7 | BUX83 |
INCHANGE |
NPN Transistor |
|
| 8 | BUX84 |
NXP |
Silicon diffused power transistors |
|
| 9 | BUX84 |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTOR |
|
| 10 | BUX84 |
Comset Semiconductors |
(BUX84 / BUX85) Silicon diffused power transistors |
|
| 11 | BUX84 |
INCHANGE |
NPN Transistor |
|
| 12 | BUX84A |
INCHANGE |
NPN Transistor |
|
