·Low Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta.
ing Voltage IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 0.7A ICEO Collector Cutoff Current VCE= 250V; IB=0 ICBO Collector Cutoff Current VCB= 300V, IE=0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 2.5A ; VCE= 4V fT Current-Gain—Bandwidth Product IC=0.5A;VCE=10V BUX62 MIN MAX UNIT 250 V 1.5 V 2.0 V 2 mA 1.0 mA 0.5 mA 20 60 8 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inf.
SILICON NPN BIPOLAR TRANSISTOR BUX62 • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUX60 |
INCHANGE |
NPN Transistor | |
2 | BUX60 |
Seme LAB |
Bipolar NPN Device | |
3 | BUX61 |
INCHANGE |
NPN Transistor | |
4 | BUX63 |
INCHANGE |
NPN Transistor | |
5 | BUX63 |
Semelab |
Bipolar NPN Device | |
6 | BUX64 |
INCHANGE |
NPN Transistor | |
7 | BUX65 |
SEME-LAB |
Bipolar NPN Device | |
8 | BUX65 |
INCHANGE |
NPN Transistor | |
9 | BUX66 |
Seme LAB |
Bipolar PNP Device | |
10 | BUX66 |
INCHANGE |
PNP Transistor | |
11 | BUX66A |
INCHANGE |
PNP Transistor | |
12 | BUX66B |
Inchange Semiconductor |
Silicon NPN Power Transistor |