The BUX10 is a silicon Multi-Epitaxial Planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEX VCEO VEBO IC ICM IB Ptot Tstg Tj Parameter Collector-base Voltage (IE = 0) Collector-emitter Vol.
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The BUX10 is a silicon multiepitaxial planar NPN transistor in a TO−3 type package designed for use in switching and li.
·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Motor control ·Linear and switching indu.
SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Sw.
·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable.
SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Sw.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUX10A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | BUX10P |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | BUX10X |
Seme LAB |
NPN MULTI - EPITAXIAL POWER TRANSISTOR | |
4 | BUX11 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR | |
5 | BUX11 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | BUX11 |
Comset Semiconductors |
HIGH POWER TRANSISTOR | |
7 | BUX11 |
INCHANGE |
NPN Transistor | |
8 | BUX11A |
ETC |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR | |
9 | BUX11N |
Seme LAB |
Bipolar NPN Device | |
10 | BUX11N |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
11 | BUX11P |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | BUX12 |
Seme LAB |
NPN MULTI - EPITAXIAL POWER TRANSISTOR |