BUW40A - Inchange Semiconductor

BUW40A Silicon NPN Power Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER.

Features

SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW40 BUW40A IC= 50mA ; IB= 0 BUW40B V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A IC= 1A; IB= 0.2A,TC= 150℃ VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 3V ICEV Collector Cutoff Current BUW40 BUW40A BUW40B VCE= 450V;VBE= -1.5V VCE= 450V;VBE= -1.5V,TC= 150℃ VCE= 550V;VBE= -1.5V VCE= 550V;VBE= -1.5V,TC= 150℃ VCE= 650V;VBE= -1.5V VCE= 650V;VBE= -1.5V,TC= 150℃ IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 1A.