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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V(Max.)@IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 220V switchmode power supply, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS (.
ered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB= 1000V ; IB= 0 VEB= 5V; IC= 0 BUV47A MIN TYP. MAX UNIT 450 V 7 V 1.5 V 3.
BUV47A - SavantIC
·With TO-3PN package ·High breakdown voltage ·Fast switching time APPLICATIONS ·Suited for 220V switchmode power supply,.
BUV47A - Bourns Electronic Solutions
www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● ● ● Rugged Triple-Diffused Planar Construction 9 A .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUV47 |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTORS |
|
| 2 | BUV47 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BUV47 |
INCHANGE |
NPN Transistor |
|
| 4 | BUV47AFI |
INCHANGE |
NPN Transistor |
|
| 5 | BUV47B |
INCHANGE |
NPN Transistor |
|
| 6 | BUV47B |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | BUV41 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | BUV42 |
ST Microelectronics |
SILICON NPN SWITCHING TRANSISTOR |
|
| 9 | BUV42 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | BUV42 |
Seme LAB |
Bipolar NPN Device |
|
| 11 | BUV42A |
Seme LAB |
Bipolar NPN Device |
|
| 12 | BUV46 |
STMicroelectronics |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
|