BUT93 - Inchange Semiconductor

BUT93 Silicon NPN Power Transistor

·High Voltage ·High Speed Switching ·High Power Dissipation APPLICATIONS ·Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Ba.

Features

ecified SYMBOL PARAMETER CONDITIONS MIN TYP. BUT93 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0, L= 125mH 350 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 750mA B 1.0 V VBE(sat) ICES Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.1 0.2 1.5 10 V Collector Cutoff Current VCE= 600V; VBE= 0 VCE= 600V; VBE= 0; TC=125℃ IC= 1A; VCE= 2V mA hFE DC Current Gain fT Current-Gain—Bandwidth Produ.